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Post a LessonAnswered on 01/10/2024 Learn CBSE - Class 12/Science/Physics/Unit 9-Electronic Devices
Amogh KM
5 years of experience in academia. Teaching: Physics, Maths and Electronics
By merely mechanically joining two slabs of n-type and p-type materials, it does not ensure good electrical continuity between the two slabs. Let me re-iterate that: mechanical continuity or connection does not always mean good electrical connection and continuity. For one, electronic properties of a material are a strong function of the material properties. Material properties including defects and other artefacts at the atomic level strongly affect the electronic properties. A monocrystalline piece of Silicon (Or, Germanium, or any other host material) has ideal properties to create a good P-N junction. It is simply impossible to create a monocrystalline material by joining two chunks of silicon like that. It is much harder to create the perfect electrically continuous P-N junction in this manner than one may realise.
Imagine aligning two materials such that there's perfect match in orientation at the atomic level to create a monocrystalline block of material! Even if we ignore the elephant in the room and assume that somehow we can manage to get the two crystal orientations aligned to be within tolerance limits somehow, there are other factors that hold us back from "joining" them. A quote from Wolfgang Pauli is super famous in the materials and devices community - "God made the bulk; the surface was invented by the devil". One can produce/manufacture near-perfect bulk material, and predict its behaviour so well with theory, but the material's surfaces, are full of dangling bonds, chemically active sites that are often terminated with undesirable functional groups, and host impurities such as adsorbants, and what not! While surfaces can be deterministically studied, surfaces are SO much harder to engineer to the specifications we will need to achieve a P-N junction. While the idea of simply putting two slabs together is appealing and sounds easy, the challenges involved in engineering the surface to achieve the kind of electrical continuity we want is simply impossible. Maybe we can get some sort of P-N junction behaviour by ignoring some of these technicalities, the devices so formed wouldn't be upto specifications we have been able to achieve using alternate methods. Besides, manufacturing would be a bigger nightmare!
In the age of integrated circuits -- where we have BILLIONS of electronic devices and even more PN junctions in a square inch of monocrystalline silicon, manufacturing electrical components by processes such as "joining" n and p doped materials - it is simply not a scalable solution. We need scalable manufacturing techniques in those cases. But even for discreet elements which aren't a part of very large scale integrated circuits, we don't have to "join" two chunks of materials, because we have developed really good methods -- methods that are reproducable, controllable, and reliable -- to create P-N junctions in a single piece of silicon many decades ago. There is literally no reason for us to even attempt to join two disjoint pieces of n-type and p-type materials to create a P-N Junction. (For more information, you can read more about a technique called compensation doping, done through a process called ion implantation).
read lessAnswered on 07/04/2024 Learn CBSE - Class 12/Science/Physics/Unit 9-Electronic Devices
Nazia Khanum
Gallium arsenide (GaAs) is commonly used in making solar cells for several reasons:
Efficiency: GaAs solar cells offer higher conversion efficiencies compared to traditional silicon solar cells. This is because GaAs has a narrower bandgap, allowing it to absorb a broader spectrum of light, including infrared wavelengths, which are not efficiently absorbed by silicon.
High Absorption Coefficient: GaAs has a high absorption coefficient, meaning it can absorb more photons within a shorter distance compared to silicon. This allows for the fabrication of thinner solar cells, reducing material usage and cost.
Temperature Stability: GaAs solar cells perform better at high temperatures compared to silicon solar cells. They have a lower temperature coefficient, meaning their efficiency decreases less with increasing temperature, making them suitable for applications in hot climates or environments.
Durability: GaAs is more resistant to radiation damage, making GaAs solar cells more suitable for use in space applications where they are exposed to high levels of radiation.
Flexibility: GaAs solar cells can be grown using various techniques, including epitaxial growth, which allows for the fabrication of thin, lightweight, and flexible solar cells. This flexibility is advantageous for applications such as space exploration missions and portable electronic devices.
Overall, the unique properties of GaAs make it an material for solar cell applications, particularly in situations where high efficiency, durability, and temperature stability are crucial.
Answered on 07/04/2024 Learn CBSE - Class 12/Science/Physics/Unit 9-Electronic Devices
Nazia Khanum
Intrinsic semiconductors are materials like pure silicon or germanium, which have a balance of electrons and holes due to thermal excitation. At absolute zero temperature (0 Kelvin), these materials would behave like perfect insulators because there wouldn't be any thermally generated charge carriers (electrons and holes) available for conduction.
However, as you increase the temperature, thermal energy provides electrons with enough energy to jump from the valence band to the conduction band, creating electron-hole pairs. This increases the conductivity of the semiconductor. The temperature at which the intrinsic semiconductor behaves like a perfect insulator depends on the energy gap between the valence band and the conduction band. This energy gap is known as the bandgap (Eg).
The relationship between the conductivity (σ) and temperature (T) in intrinsic semiconductors is given by the exponential equation known as the intrinsic carrier concentration equation:
ni=AT3/2e−Eg2kTni=AT3/2e−2kTEg
Where:
As the temperature increases, the exponential term in the equation decreases. Therefore, at higher temperatures, the intrinsic carrier concentration increases, and the material becomes more conductive. Conversely, at lower temperatures, the intrinsic carrier concentration decreases, and the material behaves more like an insulator.
However, it's important to note that "perfect insulator" is a theoretical concept. In practical terms, even at low temperatures, there can still be some level of conductivity due to impurities or defects in the material.
Answered on 07/04/2024 Learn CBSE - Class 12/Science/Physics/Unit 9-Electronic Devices
Nazia Khanum
A p-n junction diode can be used as a half-wave rectifier to convert an alternating current (AC) signal into a pulsating direct current (DC) signal. In a half-wave rectifier circuit, the diode conducts current only when it is forward-biased (i.e., when the p-type material is connected to the positive terminal of the AC source and the n-type material is connected to the negative terminal of the AC source).
Here's how the circuit works:
AC Input Source: The AC input source provides the alternating current signal that needs to be rectified.
P-N Junction Diode (D): The p-n junction diode is connected in series with the load resistor (RL). The diode conducts current only when it is forward-biased.
Load Resistor (RL): The load resistor is connected in series with the diode to provide a path for the current to flow through when the diode is forward-biased.
Here's the circuit diagram:
AC Input Load Source Resistor | | | | | | V V ___ | ___ | | | | | |______| --| |---|---| |------|>-- |___| | |___| D | ___ ___ | | | | | | --| |------| |-------|-- |___| |___| | GND Explanation:
During the positive half-cycle of the AC input signal, the p-terminal of the diode becomes positive and the n-terminal becomes negative. This forward-biases the diode, allowing current to flow through it and the load resistor, completing the circuit. As a result, current flows through the load resistor and we get an output voltage across the load resistor.
During the negative half-cycle of the AC input signal, the p-terminal of the diode becomes negative and the n-terminal becomes positive. This reverse-biases the diode, blocking current flow through it, and thus no current flows through the load resistor. As a result, there is no output voltage across the load resistor during the negative half-cycle.
So, at the output, we get a pulsating DC signal which is the positive half-cycles of the AC input signal. This is why it's called a half-wave rectifier, as it rectifies only one half of the input AC waveform.
Answered on 07/04/2024 Learn CBSE - Class 12/Science/Physics/Unit 10-Communication Systems
Nazia Khanum
In communication systems, "attenuation" refers to the reduction in signal strength as it travels through a medium, such as a cable, fiber optic line, or air. Attenuation can occur due to various factors including distance, absorption, scattering, and interference. It is typically measured in decibels (dB) and is an essential consideration in designing and maintaining reliable communication networks.
Attenuation can degrade the quality of signals over long distances, leading to loss of information or degradation in the received signal quality. To mitigate attenuation, various techniques such as signal amplification, error correction coding, and using high-quality transmission mediums are employed in communication systems.
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