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# State the relation between the frequency v of radiation emitted by LED and the band gap energy E, of the semiconductor used to fabricate it.

The relationship between the frequency νν of radiation emitted by an LED (Light Emitting Diode) and the band gap energy EE of the semiconductor material used to fabricate it is described by the Planck-Einstein equation and the semiconductor band theory. The Planck-Einstein equation states: E=h⋅νE=h⋅ν Where: EE...

The relationship between the frequency νν of radiation emitted by an LED (Light Emitting Diode) and the band gap energy EE of the semiconductor material used to fabricate it is described by the Planck-Einstein equation and the semiconductor band theory.

The Planck-Einstein equation states:

E=h⋅νE=h⋅ν

Where:

• EE is the energy of the emitted photon,
• hh is Planck's constant (approximately 6.626×10−346.626×10−34 J·s),
• νν is the frequency of the emitted radiation.

For semiconductors, the band gap energy EE is the energy difference between the valence band and the conduction band. When an electron in the conduction band recombines with a hole in the valence band, it releases energy in the form of a photon. The energy of this photon is directly proportional to the band gap energy of the semiconductor material.

Therefore, for LEDs, the frequency νν of the emitted radiation is directly related to the band gap energy EE of the semiconductor material by the Planck-Einstein equation. As the band gap energy increases, the frequency of the emitted radiation also increases, resulting in a shift towards higher energy (shorter wavelength) light emission.

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